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1

Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors

Kumar, Yogesh, Kumar, Hemant, Rawat, Gopal, Kumar, Chandan, Sharma, Anand, Pal, Bhola N., Jit, Satyabrata

Journal:

IEEE Photonics Technology Letters

Year:

2017

Language:

english

File:

PDF, 641 KB

english, 2017

2

Pd/ZnO Nanoparticles Based Schottky Ultraviolet Photodiodes Grown on Sn-Coated n-Si Substrates by Thermal Evaporation Method

Somvanshi, Divya, Jit, Satyabrata

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2014

Language:

english

File:

PDF, 599 KB

english, 2014

3

Effects of source/drain elevation and side spacer dielectric on drivability performance of non-abrupt ultra shallow junction gate underlap GAA MOSFETs

Singh, Kunal, Kumar, Sanjay, Goel, Ekta, Singh, Balraj, Singh, Prince Kumar, Baral, Kamalaksha, Kumar, Hemant, Jit, Satyabrata

Journal:

Indian Journal of Physics

Year:

2017

Language:

english

File:

PDF, 2.61 MB

english, 2017

4

Association of plasma homocysteine level with vaso-occlusive crisis in sickle cell anemia patients of Odisha, India

Meher, Satyabrata, Patel, Siris, Das, Kishalaya, Dehury, Snehadhini, Jit, Bimal Prasad, Maske, Mahendra M., Das, Padmalaya, Dash, Bisnu Prasad, Mohanty, Pradeep Kumar

Journal:

Annals of Hematology

Year:

2019

Language:

english

File:

PDF, 369 KB

english, 2019

5

Fabrication and TCAD simulation of TiO2 nanorods electron transport layer based perovskite solar cells

Jarwal, Deepak Kumar, Mishra, Ashwini Kumar, Kumar, Amit, Ratan, Smrity, Singh, Abhinav Pratap, Kumar, Chandan, Mukherjee, Bratindranath, Jit, Satyabrata

Journal:

Superlattices and Microstructures

Year:

2020

Language:

english

File:

PDF, 1.81 MB

english, 2020

6

Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

Singh, Kunal, Kumar, Mirgender, Goel, Ekta, Singh, Balraj, Dubey, Sarvesh, Kumar, Sanjay, Jit, Satyabrata

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.50 MB

english, 2016

7

Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications

Singh, Balraj, Gola, Deepti, Goel, Ekta, Kumar, Sanjay, Singh, Kunal, Jit, Satyabrata

Journal:

Journal of Computational Electronics

Year:

2016

Language:

english

File:

PDF, 1.67 MB

english, 2016

8

Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile

Singh, Balraj, Gola, Deepti, Singh, Kunal, Goel, Ekta, Kumar, Sanjay, Jit, Satyabrata

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.26 MB

english, 2016

9

Effects of Elevated Source/Drain and Side Spacer Dielectric on the Drivability Optimization of Non-abrupt Ultra Shallow Junction Gate Underlap DG MOSFETs

Singh, Kunal, Kumar, Sanjay, Goel, Ekta, Singh, Balraj, Dubey, Sarvesh, Jit, Satyabrata

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 4.82 MB

english, 2016

10

Particle size effects on the hydrogen sensing properties of Pd/ZnO Schottky contacts fabricated by sol–gel method

Yadav, Aniruddh Bahadur, Jit, Satyabrata

Journal:

International Journal of Hydrogen Energy

Year:

2016

Language:

english

File:

PDF, 2.44 MB

english, 2016

11

2-D Analytical Threshold Voltage Model for Dielectric Pocket Double-Gate Junctionless FETs by Considering Source/Drain Depletion Effect

Singh, Balraj, Gola, Deepti, Singh, Kunal, Goel, Ekta, Kumar, Sanjay, Jit, Satyabrata

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.99 MB

english, 2017

12

Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs

Goel, Ekta, Kumar, Sanjay, Singh, Balraj, Singh, Kunal, Jit, Satyabrata

Journal:

Superlattices and Microstructures

Year:

2017

Language:

english

File:

PDF, 1.07 MB

english, 2017

13

[IEEE 2016 International Conference on Micro-Electronics and Telecommunication Engineering (ICMETE) - GHAZIABAD, India (2016.9.22-2016.9.23)] 2016 International Conference on Micro-Electronics and Telecommunication Engineering (ICMETE) - Temperature Sensitivity Analysis of Double Gate Junctionless Field Effect Transistor with Vertical Gaussian Doping Profile

Singh, Balraj, Gola, Deepti, Singh, Kunal, Goel, Ekta, Kumar, Sanjay, Jit, Satyabrata

Year:

2016

Language:

english

File:

PDF, 520 KB

english, 2016

14

Solution processed Li5AlO4 dielectric for low voltage transistor fabrication and its application for metal oxide/quantum dot heterojunction phototransistor

Sharma, Anand, Chourasia, Nitesh, Sugathan, Anumol, Kumar, Yogesh, Jit, Satyabrata, Liu, Shun-Wei, Pandey, Anshu, Biring, Sajal, Pal, Bhola Nath

Journal:

Journal of Materials Chemistry C

Year:

2017

Language:

english

File:

PDF, 1.43 MB

english, 2017

15

Colloidal CdSe Quantum Dots and PQT-12-Based Low-Temperature Self-Powered Hybrid Photodetector

Kumar, Hemant, Kumar, Yogesh, Rawat, Gopal, Kumar, Chandan, Mukherjee, Bratindranath, Pal, Bhola N., Jit, Satyabrata

Journal:

IEEE Photonics Technology Letters

Year:

2017

Language:

english

File:

PDF, 711 KB

english, 2017

16

[IEEE 2018 5th International Conference on Signal Processing and Integrated Networks (SPIN) - Noida, Delhi-NCR, India (2018.2.22-2018.2.23)] 2018 5th International Conference on Signal Processing and Integrated Networks (SPIN) - Dual-Material Ferroelectric Stacked Gate SiO2/PZT SOI Tunnel FETs with Improved Performance: Design and Analysis

Kumar, Sanjay, Singh, P. K., Chander, Sweta, Rahangdale, Ashvini, Baral, K., Jit, Satyabrata

Year:

2018

Language:

english

File:

PDF, 1.00 MB

english, 2018

17

[IEEE TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON) - Kochi, India (2019.10.17-2019.10.20)] TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON) - Subthreshold Performance Analysis of Double-Fin Multi-channel Junctionless Transistor with Substrate Bias Effects

Singh, Balraj, Gola, Deepti, Jit, Satyabrata

Year:

2019

Language:

english

File:

PDF, 447 KB

english, 2019

18

[IEEE 2018 15th IEEE India Council International Conference (INDICON) - Coimbatore, India (2018.12.16-2018.12.18)] 2018 15th IEEE India Council International Conference (INDICON) - Fabrication and Characterization of Organic-Inorganic Hybrid Perovskite CH 3 NH 3 PbI 3 Based Metal-Semiconductor-Metal Photodetector

Upadhyay, Rishibrind Kumar, Kumar, Chandan, Singh, Abhinav Pratap, Upadhyay, Deep Chandra, Jarwal, Deepak Kumar, Kumar, Amit, Ratan, Smrity, Jit, Satyabrata

Year:

2018

File:

PDF, 919 KB

2018

19

Subthreshold Modeling of Graded Channel Double Gate Junctionless FETs

Duksh, Yograj Singh, Singh, Balraj, Gola, Deepti, Tiwari, Pramod Kumar, Jit, Satyabrata

Journal:

Year:

2020

File:

PDF, 1.40 MB

2020

20

SPIE Proceedings [SPIE Asia-Pacific Optical and Wireless Communications 2002 - Shanghai, China (Monday 14 October 2002)] Materials and Devices for Optical and Wireless Communications - Light-source-integrated OPFET (LSI-OPFET): a new integrated device for optically controlled varying gain amplifier

Jit, Satyabrata, Pal, B. B., Chang-Hasnain, Constance J., Xia, YuXing, Iga, Kenichi

Year:

2002

Language:

english

File:

PDF, 201 KB

english, 2002

21

Analytical modelling of the current (I)–voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions

Jit, Satyabrata, Tripathi, Shweta

Journal:

IET Circuits Devices & Systems

Year:

2013

Language:

english

File:

PDF, 535 KB

english, 2013

22

An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET

Saramekala, G.K., Santra, Abirmoya, Dubey, Sarvesh, Jit, Satyabrata, Tiwari, Pramod Kumar

Journal:

Superlattices and Microstructures

Year:

2013

Language:

english

File:

PDF, 1.26 MB

english, 2013

23

Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs

Saramekala, Gopi Krishna, Santra, Abirmoya, Kumar, Mirgender, Dubey, Sarvesh, Jit, Satyabrata, Tiwari, Pramod Kumar

Journal:

Journal of Computational Electronics

Year:

2014

Language:

english

File:

PDF, 828 KB

english, 2014

24

A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs

Sarangi, Santunu, Bhushan, Shiv, Santra, Abirmoya, Dubey, Sarvesh, Jit, Satyabrata, Tiwari, Pramod Kumar

Journal:

Superlattices and Microstructures

Year:

2013

Language:

english

File:

PDF, 2.56 MB

english, 2013

25

Effects of Sn and Zn Seed Layers on the Electrical Characteristics of Pd/ZnO Thin-Film Schottky Diodes Grown on n-Si Substrates

Somvanshi, Divya, Jit, Satyabrata

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1.55 MB

english, 2014

26

Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

Hazra, Purnima, Singh, Satyendra Kumar, Jit, Satyabrata

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2015

Language:

english

File:

PDF, 1.55 MB

english, 2015

27

[IEEE 2014 International Conference on Advances in Electrical Engineering (ICAEE) - Vellore, India (2014.1.9-2014.1.11)] 2014 International Conference on Advances in Electrical Engineering (ICAEE) - ATLAS™ based simulation study of the electrical characteristics of dual-metal-gate (DMG) fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs

Saramekala, Gopi Krishna, Jit, Satyabrata, Tiwari, Pramod Kumar

Year:

2014

Language:

english

File:

PDF, 246 KB

english, 2014

28

Mean Barrier Height and Richardson Constant for Pd/ZnO Thin Film-Based Schottky Diodes Grown on n-Si Substrates by Thermal Evaporation Method

Somvanshi, Divya, Jit, Satyabrata

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 439 KB

english, 2013

29

A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs

Samoju, Visweswara Rao, Jit, Satyabrata, Tiwari, Pramod Kumar

Journal:

Chinese Physics Letters

Year:

2014

Language:

english

File:

PDF, 442 KB

english, 2014

30

Effects of Electrostatically Doped Source/Drain and Ferroelectric Gate Oxide on Subthreshold Swing and Impact Ionization Rate of Strained-Si-on-Insulator Tunnel Field-Effect Transistors

Kumar, Mirgender, Jit, Satyabrata

Journal:

IEEE Transactions on Nanotechnology

Year:

2015

Language:

english

File:

PDF, 157 KB

english, 2015

31

A Novel Four-Terminal Ferroelectric Tunnel FET for Quasi-Ideal Switch

Kumar, Mirgender, Jit, Satyabrata

Journal:

IEEE Transactions on Nanotechnology

Year:

2015

Language:

english

File:

PDF, 546 KB

english, 2015

32

Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes

Yadav, Aniruddh Bahadur, Pandey, Amritanshu, Somvanshi, Divya, Jit, Satyabrata

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.94 MB

english, 2015

33

SPIE Proceedings [SPIE Asia-Pacific Optical and Wireless Communications Conference and Exhibit - Beijing, China (Monday 12 November 2001)] Optoelectronics, Materials, and Devices for Communications - OPFET-LAOS: a new opto-electronic integrated device for light-amplifying optical switch

Jit, Satyabrata, Pal, B. B., Lee, Tien Pei, Wang, Qiming

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

34

Fabrication and Characterization of ZnO Nanowires by Thermal Oxidation Method

Somvanshi, Divya, Jit, Satyabrata

Journal:

Advanced Materials Research

Year:

2012

Language:

english

File:

PDF, 442 KB

english, 2012

35

[OSA International Conference on Fibre Optics and Photonics - Kharagpur (2014..-..)] 12th International Conference on Fiber Optics and Photonics - Circular resonator based two ports optical switch

Dikshit, Ashutosh, Tiwari, Subhashish, jit, Satyabrata, pandey, amritanshu, Pandey, Praveen C.

Year:

2014

Language:

english

File:

PDF, 176 KB

english, 2014

36

Strain-Induced Plasma Radiation in Terahertz Domain in Strained-Si-on-Insulator MOSFETs

Kumar, Mirgender, Kumar, Sanjay, Goel, Ekta, Singh, Kunal, Singh, Balraj, Jit, Satyabrata

Journal:

IEEE Transactions on Plasma Science

Year:

2016

Language:

english

File:

PDF, 999 KB

english, 2016

37

2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

Goel, Ekta, Kumar, Sanjay, Singh, Kunal, Singh, Balraj, Kumar, Mirgender, Jit, Satyabrata

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.94 MB

english, 2016

38

Ultraviolet Detection Properties of p-Si/n-TiO<sub>2</sub> Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol-Gel Methods: A Comparative Study

Rawat, Gopal, Somvanshi, Divya, Kumar, Hemant, Kumar, Yogesh, Kumar, Chandan, Jit, Satyabrata

Journal:

IEEE Transactions on Nanotechnology

Year:

2015

Language:

english

File:

PDF, 865 KB

english, 2015

39

Effect of ZnO Seed Layer on the Electrical Characteristics of Pd/ZnO Thin-Film-Based Schottky Contacts Grown on n-Si Substrates

Somvanshi, Divya, Jit, Satyabrata

Journal:

IEEE Transactions on Nanotechnology

Year:

2014

Language:

english

File:

PDF, 691 KB

english, 2014

40

Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs)

Tiwari, Pramod Kumar, Samoju, Visweswara Rao, Sunkara, Thandva, Dubey, Sarvesh, Jit, Satyabrata

Journal:

Journal of Computational Electronics

Year:

2016

Language:

english

File:

PDF, 799 KB

english, 2016

41

A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO₂/High-k Stacked Gate-Oxide Structure

Kumar, Sanjay, Goel, Ekta, Singh, Kunal, Singh, Balraj, Kumar, Mirgender, Jit, Satyabrata

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 3.10 MB

english, 2016

42

[IEEE 2015 Annual IEEE India Conference (INDICON) - New Delhi, India (2015.12.17-2015.12.20)] 2015 Annual IEEE India Conference (INDICON) - Structural and optical characteristics of n-TiO2 thin films by sol-gel method

Rawat, Gopal, Kumar, Hemant, Kumar, Yogesh, Kumar, Chandan, Somvanshi, Divya, Jit, Satyabrata

Year:

2015

Language:

english

File:

PDF, 597 KB

english, 2015

43

[IEEE 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) - Bengaluru, India (2014.12.3-2014.12.6)] 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) - Electrical characteristics of Pd/ZnO nanowires (NWs)-based Schottky diodes grown on Zn seed layercoated n-Si substrates

Somvanshi, Divya, Jit, Satyabrata

Year:

2014

Language:

english

File:

PDF, 368 KB

english, 2014

44

An in-house approach for fabrication of silicon nanowire arrays using electroless metal deposition and etching method

Hazra, Purnima, Jit, Satyabrata

Journal:

International Journal of Surface Science and Engineering

Year:

2013

Language:

english

File:

PDF, 433 KB

english, 2013

45

Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

Goel, Ekta, Singh, Balraj, Kumar, Sanjay, Singh, Kunal, Jit, Satyabrata

Journal:

Indian Journal of Physics

Year:

2017

Language:

english

File:

PDF, 980 KB

english, 2017

46

Electrical and Ultraviolet-A Detection Properties of E-Beam Evaporated n-TiO2 Capped p-Si Nanowires Heterojunction Photodiodes

Rawat, Gopal, Somvanshi, Divya, Kumar, Yogesh, Kumar, Hemant, Kumar, Chandan, Jit, Satyabrata

Journal:

IEEE Transactions on Nanotechnology

Year:

2016

Language:

english

File:

PDF, 1.92 MB

english, 2016

47

Analytical modeling of subthreshold characteristics of ion-implanted symmetric double gate junctionless field effect transistors

Singh, Balraj, Gola, Deepti, Singh, Kunal, Goel, Ekta, Kumar, Sanjay, Jit, Satyabrata

Journal:

Materials Science in Semiconductor Processing

Year:

2017

Language:

english

File:

PDF, 2.18 MB

english, 2017

48

[IEEE 2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) - Bangalore, India (2016.5.20-2016.5.21)] 2016 IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) - Performance evaluation of double gate junctionless field effect transistor with vertical Gaussian doping profile

Singh, Balraj, Gola, Deepti, Kumar, Sanjay, Singh, Kunal, Goel, Ekta, Jit, Satyabrata

Year:

2016

Language:

english

File:

PDF, 1.08 MB

english, 2016

49

[IEEE 2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS) - Gwalior, India (2016.12.19-2016.12.21)] 2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS) - Optical Characteristics of Solution Processed MoO2/ZnO Quantum Dots Based Thin Film Transitor

Kumar, Hemant, Kumar, Yogesh, Rawat, Gopal, Kumar, Chandan, Pal, Bhola N., Jit, Satyabrata

Year:

2016

Language:

english

File:

PDF, 2.67 MB

english, 2016

50

2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure

Kumar, Sanjay, Goel, Ekta, Singh, Kunal, Singh, Balraj, Singh, Prince Kumar, Baral, Kamalaksha, Jit, Satyabrata

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 3.60 MB

english, 2017